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PD- 95073A
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l 100% RG Tested l Lead-Free
l
IRFR3711PbF IRFU3711PBF
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
6.5m
ID
110A
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3711
I-Pak IRFU3711
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max
20 20 100 69 440 2.5 120 0.96 -55 to +150
Units
V
c
f f
A W W/C C
Maximum Power Dissipation Maximum Power Dissipation
g
Linear Derating Factor Junction and Storage Temperature Range
Thermal Resistance
Symbol
RJC RJA RJA
Parameter
Junction-to-Case
h
Typ
Max
1.04 50 110
Units
C/W
Junction-to-Ambient (PCB Mount) Junction-to-Ambient
h
gh
--- --- ---
Notes through are on page 10
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1
1/7/05
IRFR/U3711PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min
20 --- --- --- 1.0 --- --- --- --- ---
Typ
--- 0.022 5.2 6.7 --- --- --- --- --- ---
Max Units
--- --- 6.5 8.5 3.0 140 20 100 200 -200 nA A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
V/C Reference to 25C, ID = 1mA m V
e e
VDS = VGS, ID = 250A
IGSS
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min
53 --- --- --- --- 0.3 --- --- --- --- --- --- ---
Typ
--- 29 7.3 8.9 33 --- 12 220 17 12 2980 1770 280
Max Units
--- 44 --- --- --- 2.5 --- --- --- --- --- --- --- pF ns VDD = 10V ID = 30A RG = 1.8 VGS = 4.5V VGS = 0V VDS = 10V nC S ID = 15A VDS = 10V
Conditions
VDS = 16V, ID = 30A
VGS = 4.5V VGS = 0V, VDS = 10V
e
e
= 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ --- --- Max 460 30 Units mJ A
Diode Characteristics
Symbol
IS ISM VSD trr Qrr trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min
--- --- --- --- --- --- --- ---
Typ
--- --- 0.88 0.82 50 61 48 65
Max Units
110
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 16A, VR = 10V di/dt = 100A/s
f
A
440 1.3 --- 75 92 72 98 V ns nC ns nC
e e
e e
TJ = 125C, IF = 16A, VR = 10V di/dt = 100A/s
2
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IRFR/U3711PbF
1000
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
100
2.7V
2.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 110A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
10 2.0
V DS = 25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3711PbF
100000
10
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 30A VDS = 16V VDS = 10V
8
C, Capacitance(pF)
10000
Ciss Coss
1000
6
4
Crss
2
100 1 10 100
VDS , Drain-to-Source Voltage (V)
0 0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
ID, Drain-to-Source Current (A)
1000
10
100
100sec 1msec
TJ = 25 C
1
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100 10msec
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3711PbF
120
LIMITED BY PACKAGE
100
V DS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
80
-VDD
VGS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3711PbF
15V
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP BOTTOM
1200 1000 800 600 400 200 0 25 50 75 100 125
VDS
L
DRIVER
ID 13A 19A 30A
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U3711PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFR/U3711PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as s embly line position indicates "Lead-F ree" PART NUMBER INT ERNATIONAL RECTIF IER LOGO
IRFU120 12 916A 34
AS S EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INTERNAT IONAL RECTIFIER LOGO
IRFU120 12 34
DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY SIT E CODE
AS S EMBLY LOT CODE
8
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IRFR/U3711PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRF U120 919A 56 78
ASSEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRFU120 56 78
AS SEMBLY LOT CODE
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE
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9
IRFR/U3711PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 1.0mH RG = 25, IAS = 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately at 90C
Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 1/05
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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